SIHH11N65E-T1-GE3 Datasheet
SIHH11N65E-T1-GE3 Datasheet
Total Pages: 9
Size: 193.77 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SIHH11N65E-T1-GE3
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Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 363mOhm @ 6A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1257pF @ 100V FET Feature - Power Dissipation (Max) 130W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 8 x 8 Package / Case 8-PowerTDFN |
