SIHP18N50C-E3 Datasheet
SIHP18N50C-E3 Datasheet
Total Pages: 9
Size: 322.61 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SIHP18N50C-E3
|
Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 18A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 270mOhm @ 10A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 76nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2942pF @ 25V FET Feature - Power Dissipation (Max) 223W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
