Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SIJ188DP-T1-GE3 Datasheet

SIJ188DP-T1-GE3 Datasheet
Total Pages: 8
Size: 207.02 KB
Vishay Siliconix
This datasheet covers 1 part numbers: SIJ188DP-T1-GE3
SIJ188DP-T1-GE3 Datasheet Page 1
SIJ188DP-T1-GE3 Datasheet Page 2
SIJ188DP-T1-GE3 Datasheet Page 3
SIJ188DP-T1-GE3 Datasheet Page 4
SIJ188DP-T1-GE3 Datasheet Page 5
SIJ188DP-T1-GE3 Datasheet Page 6
SIJ188DP-T1-GE3 Datasheet Page 7
SIJ188DP-T1-GE3 Datasheet Page 8
SIJ188DP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET® Gen IV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

25.5A (Ta), 92.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

7.5V, 10V

Rds On (Max) @ Id, Vgs

3.85mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

3.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

44nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1920pF @ 30V

FET Feature

-

Power Dissipation (Max)

5W (Ta), 65.7W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8