Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SIJ420DP-T1-GE3 Datasheet

SIJ420DP-T1-GE3 Datasheet
Total Pages: 7
Size: 128.57 KB
Vishay Siliconix
This datasheet covers 1 part numbers: SIJ420DP-T1-GE3
SIJ420DP-T1-GE3 Datasheet Page 1
SIJ420DP-T1-GE3 Datasheet Page 2
SIJ420DP-T1-GE3 Datasheet Page 3
SIJ420DP-T1-GE3 Datasheet Page 4
SIJ420DP-T1-GE3 Datasheet Page 5
SIJ420DP-T1-GE3 Datasheet Page 6
SIJ420DP-T1-GE3 Datasheet Page 7
SIJ420DP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.6mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

90nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3630pF @ 10V

FET Feature

-

Power Dissipation (Max)

4.8W (Ta), 62.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8