Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SIR432DP-T1-GE3 Datasheet

SIR432DP-T1-GE3 Datasheet
Total Pages: 7
Size: 118.95 KB
Vishay Siliconix
This datasheet covers 1 part numbers: SIR432DP-T1-GE3
SIR432DP-T1-GE3 Datasheet Page 1
SIR432DP-T1-GE3 Datasheet Page 2
SIR432DP-T1-GE3 Datasheet Page 3
SIR432DP-T1-GE3 Datasheet Page 4
SIR432DP-T1-GE3 Datasheet Page 5
SIR432DP-T1-GE3 Datasheet Page 6
SIR432DP-T1-GE3 Datasheet Page 7
SIR432DP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

28.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

7.5V, 10V

Rds On (Max) @ Id, Vgs

30.6mOhm @ 8.6A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

32nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1170pF @ 50V

FET Feature

-

Power Dissipation (Max)

5W (Ta), 54W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8