Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SIR850DP-T1-GE3 Datasheet

SIR850DP-T1-GE3 Datasheet
Total Pages: 13
Size: 306.51 KB
Vishay Siliconix
This datasheet covers 1 part numbers: SIR850DP-T1-GE3
SIR850DP-T1-GE3 Datasheet Page 1
SIR850DP-T1-GE3 Datasheet Page 2
SIR850DP-T1-GE3 Datasheet Page 3
SIR850DP-T1-GE3 Datasheet Page 4
SIR850DP-T1-GE3 Datasheet Page 5
SIR850DP-T1-GE3 Datasheet Page 6
SIR850DP-T1-GE3 Datasheet Page 7
SIR850DP-T1-GE3 Datasheet Page 8
SIR850DP-T1-GE3 Datasheet Page 9
SIR850DP-T1-GE3 Datasheet Page 10
SIR850DP-T1-GE3 Datasheet Page 11
SIR850DP-T1-GE3 Datasheet Page 12
SIR850DP-T1-GE3 Datasheet Page 13
SIR850DP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

7mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1120pF @ 15V

FET Feature

-

Power Dissipation (Max)

4.8W (Ta), 41.7W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8