SIRB40DP-T1-GE3 Datasheet
SIRB40DP-T1-GE3 Datasheet
Total Pages: 13
Size: 352.23 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SIRB40DP-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 40A (Tc) Rds On (Max) @ Id, Vgs 3.25mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 45nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 4290pF @ 20V Power - Max 46.2W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® SO-8 Dual Supplier Device Package PowerPAK® SO-8 Dual |
