SIS612EDNT-T1-GE3 Datasheet
SIS612EDNT-T1-GE3 Datasheet
Total Pages: 8
Size: 206.48 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SIS612EDNT-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 3.9mOhm @ 14A, 4.5V Vgs(th) (Max) @ Id 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 2060pF @ 10V FET Feature - Power Dissipation (Max) 3.7W (Ta), 52W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8S (3.3x3.3) Package / Case PowerPAK® 1212-8S |
