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SISA96DN-T1-GE3 Datasheet

SISA96DN-T1-GE3 Datasheet
Total Pages: 7
Size: 206.25 KB
Vishay Siliconix
This datasheet covers 1 part numbers: SISA96DN-T1-GE3
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SISA96DN-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET® Gen IV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

16A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

8.8mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 4.5V

Vgs (Max)

+20V, -16V

Input Capacitance (Ciss) (Max) @ Vds

1385pF @ 15V

FET Feature

-

Power Dissipation (Max)

26.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8

Package / Case

PowerPAK® 1212-8