Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SISS02DN-T1-GE3 Datasheet

SISS02DN-T1-GE3 Datasheet
Total Pages: 9
Size: 299.79 KB
Vishay Siliconix
This datasheet covers 1 part numbers: SISS02DN-T1-GE3
SISS02DN-T1-GE3 Datasheet Page 1
SISS02DN-T1-GE3 Datasheet Page 2
SISS02DN-T1-GE3 Datasheet Page 3
SISS02DN-T1-GE3 Datasheet Page 4
SISS02DN-T1-GE3 Datasheet Page 5
SISS02DN-T1-GE3 Datasheet Page 6
SISS02DN-T1-GE3 Datasheet Page 7
SISS02DN-T1-GE3 Datasheet Page 8
SISS02DN-T1-GE3 Datasheet Page 9
SISS02DN-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET® Gen IV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

51A (Ta), 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.2mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

83nC @ 10V

Vgs (Max)

+16V, -12V

Input Capacitance (Ciss) (Max) @ Vds

4450pF @ 10V

FET Feature

-

Power Dissipation (Max)

5W (Ta), 65.7W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8S (3.3x3.3)

Package / Case

PowerPAK® 1212-8S