SISS61DN-T1-GE3 Datasheet
SISS61DN-T1-GE3 Datasheet
Total Pages: 8
Size: 272.52 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SISS61DN-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® Gen III FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 30.9A (Ta), 111.9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 3.5mOhm @ 15A, 4.5V Vgs(th) (Max) @ Id 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 231nC @ 10V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 8740pF @ 10V FET Feature - Power Dissipation (Max) 5W (Ta), 65.8W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8S Package / Case PowerPAK® 1212-8S |
