SIUD412ED-T1-GE3 Datasheet
SIUD412ED-T1-GE3 Datasheet
Total Pages: 9
Size: 218.42 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SIUD412ED-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 500mA (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V Rds On (Max) @ Id, Vgs 340mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.71nC @ 4.5V Vgs (Max) ±5V Input Capacitance (Ciss) (Max) @ Vds 21pF @ 6V FET Feature - Power Dissipation (Max) 1.25W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 0806 Package / Case PowerPAK® 0806 |
