SIZ710DT-T1-GE3 Datasheet
SIZ710DT-T1-GE3 Datasheet
Total Pages: 14
Size: 191.13 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SIZ710DT-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Half Bridge) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 16A, 35A Rds On (Max) @ Id, Vgs 6.8mOhm @ 19A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 820pF @ 10V Power - Max 27W, 48W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 6-PowerPair™ Supplier Device Package 6-PowerPair™ |
