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SIZ998DT-T1-GE3 Datasheet

SIZ998DT-T1-GE3 Datasheet
Total Pages: 14
Size: 238.2 KB
Vishay Siliconix
This datasheet covers 1 part numbers: SIZ998DT-T1-GE3
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SIZ998DT-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Dual), Schottky

FET Feature

Standard

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

20A (Tc), 60A (Tc)

Rds On (Max) @ Id, Vgs

6.7mOhm @ 15A, 10V, 2.8mOhm @ 19A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.1nC @ 4.5V, 19.8nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

930pF @ 15V, 2620pF @ 15V

Power - Max

20.2W, 32.9W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-PowerWDFN

Supplier Device Package

8-PowerPair®