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SPP18P06PHKSA1 Datasheet

SPP18P06PHKSA1 Datasheet
Total Pages: 9
Size: 456.53 KB
Infineon Technologies
This datasheet covers 1 part numbers: SPP18P06PHKSA1
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SPP18P06PHKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

18.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

130mOhm @ 13.2A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

28nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

860pF @ 25V

FET Feature

-

Power Dissipation (Max)

81.1W (Ta)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3

Package / Case

TO-220-3