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SPP80N06S2L-H5 Datasheet

SPP80N06S2L-H5 Datasheet
Total Pages: 8
Size: 311.12 KB
Infineon Technologies
This datasheet covers 2 part numbers: SPP80N06S2L-H5, SPB80N06S2L-H5
SPP80N06S2L-H5 Datasheet Page 1
SPP80N06S2L-H5 Datasheet Page 2
SPP80N06S2L-H5 Datasheet Page 3
SPP80N06S2L-H5 Datasheet Page 4
SPP80N06S2L-H5 Datasheet Page 5
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SPP80N06S2L-H5 Datasheet Page 7
SPP80N06S2L-H5 Datasheet Page 8
SPP80N06S2L-H5

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

2V @ 230µA

Gate Charge (Qg) (Max) @ Vgs

190nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6640pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

SPB80N06S2L-H5

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

2V @ 230µA

Gate Charge (Qg) (Max) @ Vgs

190nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6640pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-3-2

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB