Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SQ3426EEV-T1-GE3 Datasheet

SQ3426EEV-T1-GE3 Datasheet
Total Pages: 7
Size: 145.64 KB
Vishay Siliconix
This datasheet covers 2 part numbers: SQ3426EEV-T1-GE3, SQ3426AEEV-T1_GE3
SQ3426EEV-T1-GE3 Datasheet Page 1
SQ3426EEV-T1-GE3 Datasheet Page 2
SQ3426EEV-T1-GE3 Datasheet Page 3
SQ3426EEV-T1-GE3 Datasheet Page 4
SQ3426EEV-T1-GE3 Datasheet Page 5
SQ3426EEV-T1-GE3 Datasheet Page 6
SQ3426EEV-T1-GE3 Datasheet Page 7
SQ3426EEV-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

42mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

700pF @ 30V

FET Feature

-

Power Dissipation (Max)

5W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP

Package / Case

SOT-23-6 Thin, TSOT-23-6

SQ3426AEEV-T1_GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP

Package / Case

SOT-23-6 Thin, TSOT-23-6