SQ3585EV-T1_GE3 Datasheet
SQ3585EV-T1_GE3 Datasheet
Total Pages: 11
Size: 263.16 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SQ3585EV-T1_GE3
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Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® FET Type N and P-Channel FET Feature Standard Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3.57A (Tc), 2.5A (Tc) Rds On (Max) @ Id, Vgs 77mOhm @ 1A, 4.5V, 166mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 4.5V, 3.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1.67W Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case SOT-23-6 Thin, TSOT-23-6 Supplier Device Package 6-TSOP |
