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SQA470EJ-T1_GE3 Datasheet

SQA470EJ-T1_GE3 Datasheet
Total Pages: 6
Size: 170.19 KB
Vishay Siliconix
This datasheet covers 1 part numbers: SQA470EJ-T1_GE3
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SQA470EJ-T1_GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

Automotive, AEC-Q101, TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

2.25A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

65mOhm @ 3A, 4.5V

Vgs(th) (Max) @ Id

1.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

440pF @ 20V

FET Feature

-

Power Dissipation (Max)

13.6W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SC-70-6 Single

Package / Case

PowerPAK® SC-70-6