Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SQD100N03-3M4_GE3 Datasheet

SQD100N03-3M4_GE3 Datasheet
Total Pages: 9
Size: 155.8 KB
Vishay Siliconix
This datasheet covers 1 part numbers: SQD100N03-3M4_GE3
SQD100N03-3M4_GE3 Datasheet Page 1
SQD100N03-3M4_GE3 Datasheet Page 2
SQD100N03-3M4_GE3 Datasheet Page 3
SQD100N03-3M4_GE3 Datasheet Page 4
SQD100N03-3M4_GE3 Datasheet Page 5
SQD100N03-3M4_GE3 Datasheet Page 6
SQD100N03-3M4_GE3 Datasheet Page 7
SQD100N03-3M4_GE3 Datasheet Page 8
SQD100N03-3M4_GE3 Datasheet Page 9
SQD100N03-3M4_GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

Automotive, AEC-Q101, TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.4mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

124nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7349pF @ 15V

FET Feature

-

Power Dissipation (Max)

136W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252AA

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63