Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SQJ409EP-T1_GE3 Datasheet

SQJ409EP-T1_GE3 Datasheet
Total Pages: 7
Size: 183.01 KB
Vishay Siliconix
This datasheet covers 1 part numbers: SQJ409EP-T1_GE3
SQJ409EP-T1_GE3 Datasheet Page 1
SQJ409EP-T1_GE3 Datasheet Page 2
SQJ409EP-T1_GE3 Datasheet Page 3
SQJ409EP-T1_GE3 Datasheet Page 4
SQJ409EP-T1_GE3 Datasheet Page 5
SQJ409EP-T1_GE3 Datasheet Page 6
SQJ409EP-T1_GE3 Datasheet Page 7
SQJ409EP-T1_GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

Automotive, AEC-Q101, TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

7mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

260nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

11000pF @ 25V

FET Feature

-

Power Dissipation (Max)

68W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8