Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SQJ488EP-T1_GE3 Datasheet

SQJ488EP-T1_GE3 Datasheet
Total Pages: 10
Size: 226.74 KB
Vishay Siliconix
This datasheet covers 1 part numbers: SQJ488EP-T1_GE3
SQJ488EP-T1_GE3 Datasheet Page 1
SQJ488EP-T1_GE3 Datasheet Page 2
SQJ488EP-T1_GE3 Datasheet Page 3
SQJ488EP-T1_GE3 Datasheet Page 4
SQJ488EP-T1_GE3 Datasheet Page 5
SQJ488EP-T1_GE3 Datasheet Page 6
SQJ488EP-T1_GE3 Datasheet Page 7
SQJ488EP-T1_GE3 Datasheet Page 8
SQJ488EP-T1_GE3 Datasheet Page 9
SQJ488EP-T1_GE3 Datasheet Page 10
SQJ488EP-T1_GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

Automotive, AEC-Q101, TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

42A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

21mOhm @ 7.4A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

27nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

979pF @ 25V

FET Feature

-

Power Dissipation (Max)

83W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

8-PowerTDFN