SQJ570EP-T1_GE3 Datasheet
SQJ570EP-T1_GE3 Datasheet
Total Pages: 10
Size: 293.8 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SQJ570EP-T1_GE3
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Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® FET Type N and P-Channel FET Feature Standard Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 15A (Tc), 9.5A (Tc) Rds On (Max) @ Id, Vgs 45mOhm @ 6A, 10V, 146mOhm @ 6A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V, 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 650pF @ 25V, 600pF @ 25V Power - Max 27W Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® SO-8 Dual Supplier Device Package PowerPAK® SO-8 Dual |
