Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SQM120N03-1M5L_GE3 Datasheet

SQM120N03-1M5L_GE3 Datasheet
Total Pages: 9
Size: 159.56 KB
Vishay Siliconix
This datasheet covers 1 part numbers: SQM120N03-1M5L_GE3
SQM120N03-1M5L_GE3 Datasheet Page 1
SQM120N03-1M5L_GE3 Datasheet Page 2
SQM120N03-1M5L_GE3 Datasheet Page 3
SQM120N03-1M5L_GE3 Datasheet Page 4
SQM120N03-1M5L_GE3 Datasheet Page 5
SQM120N03-1M5L_GE3 Datasheet Page 6
SQM120N03-1M5L_GE3 Datasheet Page 7
SQM120N03-1M5L_GE3 Datasheet Page 8
SQM120N03-1M5L_GE3 Datasheet Page 9
SQM120N03-1M5L_GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.5mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

270nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

15605pF @ 15V

FET Feature

-

Power Dissipation (Max)

375W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB