SSM3K316T(TE85L Datasheet
SSM3K316T(TE85L Datasheet
Total Pages: 6
Size: 188.88 KB
Toshiba Semiconductor and Storage
Website: http://www.toshiba.com/taec/
This datasheet covers 1 part numbers:
SSM3K316T(TE85L,F)
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Manufacturer Toshiba Semiconductor and Storage Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 10V Rds On (Max) @ Id, Vgs 53mOhm @ 3A, 10V Vgs(th) (Max) @ Id 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs 4.3nC @ 4V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 270pF @ 10V FET Feature - Power Dissipation (Max) 700mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TSM Package / Case TO-236-3, SC-59, SOT-23-3 |
