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SSM3K7002BS Datasheet

SSM3K7002BS Datasheet
Total Pages: 5
Size: 133.09 KB
Toshiba Semiconductor and Storage
This datasheet covers 1 part numbers: SSM3K7002BS,LF
SSM3K7002BS Datasheet Page 1
SSM3K7002BS Datasheet Page 2
SSM3K7002BS Datasheet Page 3
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SSM3K7002BS Datasheet Page 5
SSM3K7002BS,LF

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

200mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.1Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

17pF @ 25V

FET Feature

-

Power Dissipation (Max)

200mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

S-Mini

Package / Case

TO-236-3, SC-59, SOT-23-3