SSM6K513NU Datasheet
SSM6K513NU Datasheet
Total Pages: 6
Size: 263.31 KB
Toshiba Semiconductor and Storage
Website: http://www.toshiba.com/taec/
This datasheet covers 1 part numbers:
SSM6K513NU,LF
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Manufacturer Toshiba Semiconductor and Storage Series U-MOSIX-H FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 15A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 8.9mOhm @ 4A, 10V Vgs(th) (Max) @ Id 2.1V @ 100µA Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1130pF @ 15V FET Feature - Power Dissipation (Max) 1.25W (Ta) Operating Temperature 150°C (TA) Mounting Type Surface Mount Supplier Device Package 6-UDFNB (2x2) Package / Case 6-WDFN Exposed Pad |
