STB13N60M2 Datasheet
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Manufacturer STMicroelectronics Series MDmesh™ II Plus FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 11A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 380mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 580pF @ 100V FET Feature - Power Dissipation (Max) 110W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer STMicroelectronics Series MDmesh™ II Plus FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 11A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 380mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 580pF @ 100V FET Feature - Power Dissipation (Max) 110W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
