STD11N60M2-EP Datasheet
STD11N60M2-EP Datasheet
Total Pages: 17
Size: 369.46 KB
STMicroelectronics
Website: https://www.st.com/
This datasheet covers 1 part numbers:
STD11N60M2-EP
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Manufacturer STMicroelectronics Series MDmesh™ M2-EP FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 595mOhm @ 3.75A, 10V Vgs(th) (Max) @ Id 4.75V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12.4nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 390pF @ 100V FET Feature - Power Dissipation (Max) 85W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
