STFW3N170 Datasheet
STFW3N170 Datasheet
Total Pages: 12
Size: 696.58 KB
STMicroelectronics
Website: https://www.st.com/
This datasheet covers 1 part numbers:
STFW3N170
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Manufacturer STMicroelectronics Series PowerMESH™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1700V Current - Continuous Drain (Id) @ 25°C 2.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 13Ohm @ 1.3A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 100V FET Feature - Power Dissipation (Max) 63W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package ISOWATT-218FX Package / Case ISOWATT218FX |
