STN3P6F6 Datasheet
STN3P6F6 Datasheet
Total Pages: 13
Size: 589.6 KB
STMicroelectronics
Website: https://www.st.com/
This datasheet covers 1 part numbers:
STN3P6F6
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Manufacturer STMicroelectronics Series DeepGATE™, STripFET™ VI FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 160mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6.4nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 340pF @ 48V FET Feature - Power Dissipation (Max) 2.6W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-223 Package / Case TO-261-4, TO-261AA |
