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STP110N8F6 Datasheet

STP110N8F6 Datasheet
Total Pages: 13
Size: 551.86 KB
STMicroelectronics
This datasheet covers 1 part numbers: STP110N8F6
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STP110N8F6

STMicroelectronics

Manufacturer

STMicroelectronics

Series

STripFET™ F6

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

110A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

6.5mOhm @ 55A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

150nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

9130pF @ 40V

FET Feature

-

Power Dissipation (Max)

200W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3