Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STP12N60M2 Datasheet

STP12N60M2 Datasheet
Total Pages: 13
Size: 391.04 KB
STMicroelectronics
This datasheet covers 1 part numbers: STP12N60M2
STP12N60M2 Datasheet Page 1
STP12N60M2 Datasheet Page 2
STP12N60M2 Datasheet Page 3
STP12N60M2 Datasheet Page 4
STP12N60M2 Datasheet Page 5
STP12N60M2 Datasheet Page 6
STP12N60M2 Datasheet Page 7
STP12N60M2 Datasheet Page 8
STP12N60M2 Datasheet Page 9
STP12N60M2 Datasheet Page 10
STP12N60M2 Datasheet Page 11
STP12N60M2 Datasheet Page 12
STP12N60M2 Datasheet Page 13
STP12N60M2

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ M2

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

450mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

16nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

538pF @ 100V

FET Feature

-

Power Dissipation (Max)

85W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3