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STP5N120 Datasheet

STP5N120 Datasheet
Total Pages: 12
Size: 434.9 KB
STMicroelectronics
This datasheet covers 1 part numbers: STP5N120
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STP5N120

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1200V

Current - Continuous Drain (Id) @ 25°C

4.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.5Ohm @ 2.3A, 10V

Vgs(th) (Max) @ Id

5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

55nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

120pF @ 25V

FET Feature

-

Power Dissipation (Max)

160W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3