STPSC10H065DI Datasheet
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Manufacturer STMicroelectronics Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 650V Current - Average Rectified (Io) 10A Voltage - Forward (Vf) (Max) @ If 1.75V @ 10A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 100µA @ 650V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-220-2 Insulated, TO-220AC Supplier Device Package TO-220AC ins Operating Temperature - Junction -40°C ~ 175°C |
Manufacturer STMicroelectronics Series - Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 650V Current - Average Rectified (Io) 10A Voltage - Forward (Vf) (Max) @ If 1.75V @ 10A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 100µA @ 650V Capacitance @ Vr, F 480pF @ 0V, 1MHz Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package TO-220AC Operating Temperature - Junction -40°C ~ 175°C |
Manufacturer STMicroelectronics Series - Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 650V Current - Average Rectified (Io) 10A Voltage - Forward (Vf) (Max) @ If 1.75V @ 10A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 100µA @ 650V Capacitance @ Vr, F 480pF @ 0V, 1MHz Mounting Type Surface Mount Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package DPAK Operating Temperature - Junction -40°C ~ 175°C |
Manufacturer STMicroelectronics Series - Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 650V Current - Average Rectified (Io) 10A Voltage - Forward (Vf) (Max) @ If 1.75V @ 10A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 100µA @ 650V Capacitance @ Vr, F 480pF @ 0V, 1MHz Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package D²PAK Operating Temperature - Junction -40°C ~ 175°C |
