STR1P2UH7 Datasheet
STR1P2UH7 Datasheet
Total Pages: 12
Size: 496.03 KB
STMicroelectronics
Website: https://www.st.com/
This datasheet covers 1 part numbers:
STR1P2UH7
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Manufacturer STMicroelectronics Series STripFET™ H7 FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 1.4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 100mOhm @ 700mA, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 4.8nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 510pF @ 10V FET Feature - Power Dissipation (Max) 350mW (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23 Package / Case TO-236-3, SC-59, SOT-23-3 |
