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STW56N65M2 Datasheet

STW56N65M2 Datasheet
Total Pages: 12
Size: 724.79 KB
STMicroelectronics
This datasheet covers 1 part numbers: STW56N65M2
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STW56N65M2

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ M2

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

49A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

62mOhm @ 24.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

93nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

3900pF @ 100V

FET Feature

-

Power Dissipation (Max)

358W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247

Package / Case

TO-247-3