Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SUD42N03-3M9P-GE3 Datasheet

SUD42N03-3M9P-GE3 Datasheet
Total Pages: 8
Size: 134.11 KB
Vishay Siliconix
This datasheet covers 1 part numbers: SUD42N03-3M9P-GE3
SUD42N03-3M9P-GE3 Datasheet Page 1
SUD42N03-3M9P-GE3 Datasheet Page 2
SUD42N03-3M9P-GE3 Datasheet Page 3
SUD42N03-3M9P-GE3 Datasheet Page 4
SUD42N03-3M9P-GE3 Datasheet Page 5
SUD42N03-3M9P-GE3 Datasheet Page 6
SUD42N03-3M9P-GE3 Datasheet Page 7
SUD42N03-3M9P-GE3 Datasheet Page 8
SUD42N03-3M9P-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

42A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.9mOhm @ 22A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

100nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3535pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 73.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63