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SUD50N024-09P-E3 Datasheet

SUD50N024-09P-E3 Datasheet
Total Pages: 5
Size: 59.61 KB
Vishay Siliconix
This datasheet covers 1 part numbers: SUD50N024-09P-E3
SUD50N024-09P-E3 Datasheet Page 1
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SUD50N024-09P-E3 Datasheet Page 5
SUD50N024-09P-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

22V

Current - Continuous Drain (Id) @ 25°C

49A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

9.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

16nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1300pF @ 10V

FET Feature

-

Power Dissipation (Max)

6.5W (Ta), 39.5W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252, (D-Pak)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63