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SUM110N06-3M9H-E3 Datasheet

SUM110N06-3M9H-E3 Datasheet
Total Pages: 6
Size: 76.38 KB
Vishay Siliconix
This datasheet covers 1 part numbers: SUM110N06-3M9H-E3
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SUM110N06-3M9H-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

110A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.9mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

300nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

15800pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.75W (Ta), 375W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263 (D2Pak)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB