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SUP75N03-04-E3 Datasheet

SUP75N03-04-E3 Datasheet
Total Pages: 5
Size: 69.96 KB
Vishay Siliconix
This datasheet covers 1 part numbers: SUP75N03-04-E3
SUP75N03-04-E3 Datasheet Page 1
SUP75N03-04-E3 Datasheet Page 2
SUP75N03-04-E3 Datasheet Page 3
SUP75N03-04-E3 Datasheet Page 4
SUP75N03-04-E3 Datasheet Page 5
SUP75N03-04-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4mOhm @ 75A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

250nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

10742pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.7W (Ta), 187W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3