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SUP85N03-3M6P-GE3 Datasheet

SUP85N03-3M6P-GE3 Datasheet
Total Pages: 6
Size: 95.71 KB
Vishay Siliconix
This datasheet covers 1 part numbers: SUP85N03-3M6P-GE3
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SUP85N03-3M6P-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

85A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.6mOhm @ 22A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

100nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3535pF @ 15V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta), 78.1W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3