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SUP90N08-6M8P-E3 Datasheet

SUP90N08-6M8P-E3 Datasheet
Total Pages: 6
Size: 106.07 KB
Vishay Siliconix
This datasheet covers 1 part numbers: SUP90N08-6M8P-E3
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SUP90N08-6M8P-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

90A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

6.8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

115nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4620pF @ 30V

FET Feature

-

Power Dissipation (Max)

3.75W (Ta), 272W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3