TJ80S04M3L(T6L1 Datasheet
TJ80S04M3L(T6L1 Datasheet
Total Pages: 9
Size: 237.39 KB
Toshiba Semiconductor and Storage
Website: http://www.toshiba.com/taec/
This datasheet covers 1 part numbers:
TJ80S04M3L(T6L1,NQ
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Manufacturer Toshiba Semiconductor and Storage Series U-MOSVI FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 80A (Ta) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 5.2mOhm @ 40A, 10V Vgs(th) (Max) @ Id 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs 158nC @ 10V Vgs (Max) +10V, -20V Input Capacitance (Ciss) (Max) @ Vds 7770pF @ 10V FET Feature - Power Dissipation (Max) 100W (Tc) Operating Temperature 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK+ Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
