TP65H035WSQA Datasheet
TP65H035WSQA Datasheet
Total Pages: 12
Size: 953.59 KB
Transphorm
This datasheet covers 1 part numbers:
TP65H035WSQA
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Manufacturer Transphorm Series Automotive, AEC-Q101 FET Type N-Channel Technology GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 47.2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 41mOhm @ 32A, 10V Vgs(th) (Max) @ Id 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 400V FET Feature - Power Dissipation (Max) 187W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3 Package / Case TO-247-3 |
