TPC8207(TE12L Datasheet
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Manufacturer Toshiba Semiconductor and Storage Series - FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 6A Rds On (Max) @ Id, Vgs 20mOhm @ 4.8A, 4V Vgs(th) (Max) @ Id 1.2V @ 200µA Gate Charge (Qg) (Max) @ Vgs 22nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 2010pF @ 10V Power - Max 450mW Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.173", 4.40mm Width) Supplier Device Package 8-SOP (5.5x6.0) |
Manufacturer Toshiba Semiconductor and Storage Series - FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 6A Rds On (Max) @ Id, Vgs 20mOhm @ 4.8A, 4V Vgs(th) (Max) @ Id 1.2V @ 200µA Gate Charge (Qg) (Max) @ Vgs 22nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 2010pF @ 10V Power - Max 450mW Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.173", 4.40mm Width) Supplier Device Package 8-SOP (5.5x6.0) |
