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TPC8208(TE12L Datasheet

TPC8208(TE12L Datasheet
Total Pages: 7
Size: 224.48 KB
Toshiba Semiconductor and Storage
This datasheet covers 2 part numbers: TPC8208(TE12L,Q,M), TPC8208(TE12L,Q)
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TPC8208(TE12L Datasheet Page 7
TPC8208(TE12L,Q,M)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

5A

Rds On (Max) @ Id, Vgs

50mOhm @ 2.5A, 4V

Vgs(th) (Max) @ Id

1.2V @ 200µA

Gate Charge (Qg) (Max) @ Vgs

9.5nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

780pF @ 10V

Power - Max

450mW

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.173", 4.40mm Width)

Supplier Device Package

8-SOP (5.5x6.0)

TPC8208(TE12L,Q)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

5A

Rds On (Max) @ Id, Vgs

50mOhm @ 2.5A, 4V

Vgs(th) (Max) @ Id

1.2V @ 200µA

Gate Charge (Qg) (Max) @ Vgs

9.5nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

780pF @ 10V

Power - Max

450mW

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.173", 4.40mm Width)

Supplier Device Package

8-SOP (5.5x6.0)