TPCF8B01(TE85L Datasheet
TPCF8B01(TE85L Datasheet
Total Pages: 4
Size: 71.88 KB
Toshiba Semiconductor and Storage
Website: http://www.toshiba.com/taec/
This datasheet covers 1 part numbers:
TPCF8B01(TE85L,F,M
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Manufacturer Toshiba Semiconductor and Storage Series U-MOSIII FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 2.7A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 110mOhm @ 1.4A, 4.5V Vgs(th) (Max) @ Id 1.2V @ 200µA Gate Charge (Qg) (Max) @ Vgs 6nC @ 5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 470pF @ 10V FET Feature Schottky Diode (Isolated) Power Dissipation (Max) 330mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package VS-8 (2.9x1.5) Package / Case 8-SMD, Flat Lead |
