TPH3206LS Datasheet
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Manufacturer Transphorm Series - FET Type N-Channel Technology GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 17A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 180mOhm @ 11A, 8V Vgs(th) (Max) @ Id 2.6V @ 500µA Gate Charge (Qg) (Max) @ Vgs 9.3nC @ 4.5V Vgs (Max) ±18V Input Capacitance (Ciss) (Max) @ Vds 760pF @ 480V FET Feature - Power Dissipation (Max) 96W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PQFN (8x8) Package / Case 3-PowerDFN |
