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TTC012(Q) Datasheet

TTC012(Q) Datasheet
Total Pages: 3
Size: 65.59 KB
Toshiba Semiconductor and Storage
This datasheet covers 1 part numbers: TTC012(Q)
TTC012(Q) Datasheet Page 1
TTC012(Q) Datasheet Page 2
TTC012(Q) Datasheet Page 3
TTC012(Q)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

2A

Voltage - Collector Emitter Breakdown (Max)

375V

Vce Saturation (Max) @ Ib, Ic

1V @ 62.5mA, 500mA

Current - Collector Cutoff (Max)

10µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 300mA, 5V

Power - Max

1.1W

Frequency - Transition

-

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Supplier Device Package

PW-MOLD2